Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism

机译：图案化（001）衬底上GaAs脊量子线阵列的MBE选择性生长及其生长机理

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Selective MBE growth of an array of < -110 > -oricnted GaAs ridge QWRs was attempted on pre-patterned (001) substrates. Arrow-head shaped GaAs QWRs were selectively formed on the top (113)A facets of GaAs ridge structures. The underlying growth mechanism was clarified, and based on this, the wire width could be kinetically controlled by the growth process.

机译：尝试在预图案化（001）的基板上选择性地生长<-110>取向的GaAs脊QWR阵列。在GaAs脊结构的顶部（113）A面上选择性地形成了箭头形的GaAs QWR。阐明了潜在的生长机理，并在此基础上，可以通过生长过程动力学控制线宽。

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《IOP Conference Series no.174; International Symposium on Compound Semiconductors; 20021007-10; Lausanne(CH)》|2002年|P.145-148|共4页
会议地点 Lausanne(CH)
作者
Taketomo Sato; Isao Tamai; Hideki Hasegawa;
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作者单位

Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University, North 13, West 8, Sapporo, 060-8628, Japan;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
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专利

1. Formation of high-density GaAs hexagonal nano-wire networks by selective MBE growth on pre-patterned (001) substrates [J] . Tamai I, Sato T, Hasegawa H Physica, E. Low-dimensional systems & nanostructures . 2004,第2a4期

机译：通过在预图案（001）衬底上进行选择性MBE生长形成高密度GaAs六角形纳米线网络
2. Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates [J] . Sato T, Tamai I, Hasegawa H Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第4期

机译：预构图非平面衬底上GaAs脊量子线的选择性分子束外延生长的动力学和建模
3. MBE growth of GaAs/AlGaAs quantum well on a patterned GaAs (001) substrate [J] . Yamaguchi M, Nishimoto Y, Sawaki X Physica, E. Low-dimensional systems & nanostructures . 2004,第1a2期

机译：GaAs / AlGaAs量子阱在图案化GaAs（001）衬底上的MBE生长
4. Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism [C] . Taketomo Sato, Isao Tamai, Hideki Hasegawa, International Symposium on Compound Semiconductors . 2003

机译：在图案化（001）底板上的GaAs脊量子线阵列的选择性MBE生长及其生长机制
5. Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE. [D] . Guo, Wei. 2008

机译：MBE在纳米图案化的衬底上生长高度有序的砷化铟/砷化镓和砷化铟镓/砷化镓量子点。
6. CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation atomic structure and array life cycle during UHV MBE growth [O] . Larisa V Arapkina, Vladimir A Yuryev 2011

机译：Si（001）表面上CMOS兼容的Ge量子点的致密阵列：UHV MBE生长过程中的簇簇成核原子结构和阵列寿命
7. Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates [O] . Tamai, Isao, Sato, Taketomo, Hasegawa, Hideki 2004

机译：通过在预图案化（001）衬底上进行选择性MBE生长形成高密度GaAs六角形纳米线网络

Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism

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