GROWTH OF ULTRATHIN NITRIDE ON Si (100) BY RAPID THERMAL N_2 TREATMENT

摘要

The interaction of Si(100) surface with N_2 under rapid thermal process condition has been studied by X-ray photoelectron spectroscopy. It is found that ultrathin silicon nitride film can be grown on Si(100) surface by direct rapid thermal N_2 exposure at relatively low temperature (1150℃). Oxynitride films were grown via two different process sequences: the first being the oxidation of RTP-formed Si_3N_4 and the second being the nitridation of SiO_2 films by RTP under N_2 flow. High-frequency C-V measurements demonstrate relatively low flat band voltages for the oxynitride films formed by the oxidation of Si_3N_4. The leakage current obtained is comparable to that of SiO_2. The oxynitride formed by the nitridation of SiO_2 revealed excellent leakage current results. The data show that the nitrogen-rich oxynitrides have excellent potential to be used in deep submicron MOS devices.