SHALLOW JUNCTION CHALLENGES TO RAPID THERMAL PROCESSING

摘要

The grand challenges to the Semiconductor Industry in continuing the scaling of planar CMOS devices are described in the International Technology Roadmap for Semiconductors. One of these challenges is the requirement for the continuing reduction of the junction depth of shallow junctions such as the drain extension. A key potential solution to this challenge involves the continued development of Rapid Thermal Processing. This paper describes the challenges and the potential solutions of the roadmap. These are descriptive of the directions given to International SEMATECH for shallow junction technology development. The Potential Solutions Figure describes much of the efforts of the industry. Each of the key elements of this figure is described. The International SEMATECH program addresses all of these elements, but with an interaction consistent with the level of development of the present state-of-the-art in that particular technology. This will be reviewed in the context of the highest level advantages and issues associated with each particular technology.