COMPARISON BETWEEN 0.13 μm PARTIALLY-DEPLETED SILICON-ON-INSULATOR TECHNOLOGY WITH FLOATING BODY OPERATION AT 300 K AND 90 K

摘要

An extended study of 0.13 μm Partially-Depleted Silicon-On-Insulator transistors without body contact is carried out. The impact of the presence of a HALO implantation on the device performance is investigated. Measurements are performed to explore the electrical properties of the technology in terms of circuit applications both in digital and analog sense. The occurrence of inherent parasitic bipolar effects is also studied. A comparison is made between room temperature and 90 K device operation. A moderately low incidence of parasitic bipolar action has been found, resulting in a small degradation of the subthreshold slope and the threshold voltage. The kink effect appears in the output characteristics but the breakdown voltage, degrading the output conductance, has been efficiently increased. No hysteresis effect has been observed for the high drain bias regime.