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Cathodoluminescence in Y_2O_3:Eu Thin Films

机译:Y_2O_3:Eu薄膜中的阴极发光

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摘要

Earlier work on the cathodoluminescence of thin films, excited in the range of 0 to 1.5kV, has shown that the luminance B could be approximately described by the expression: B approx= K i V~m x~n (1) Here V is the excitation beam potential, i is the beam current and x the film thickness, K is a material constant and the exponents m and n, also material sensitive, are of the order of 1.5 and 0.5 respectively. These trends are well illustrated in figures 1 and 2, which show luminance as a function of voltage at constant current and luminance as a function of current at constant voltage, both for a range of film thicknesses. Whilst it is easy to understand the implied relation between beam current and luminance, the thickness and beam voltage result are more difficult to reconcile.
机译:在0至1.5kV范围内激发的薄膜阴极发光的早期工作表明,亮度B可以近似表示为:B近似= K i V〜mx〜n(1)这里,V是激发束电势,i是束流电流,x是膜厚度,K是材料常数,对材料也敏感的指数m和n分别为1.5和0.5。这些趋势在图1和2中得到了很好的说明,它们在一定的膜厚度范围内均显示了在恒定电流下亮度与电压的关系以及在恒定电压下电流与亮度的关系。尽管很容易理解电子束电流和亮度之间的隐含关系,但厚度和电子束电压结果更难以调和。

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