PRECURSOR SOLUTION FOR PRODUCING THIN FILM CONTAINING COPPER HALIDE (I) OR PSEUDO COPPER HALIDE (I), METHOD FOR PREPARING PRECURSOR SOLUTION THEREFOR, FILM DEPOSITION METHOD FOR THIN FILM CONTAINING COPPER HALIDE (I) OR PSEUDO COPPER HALIDE (I), AND THIN FILM CONTAINING COPPER HALIDE (I) OR PSEUDO COPPER HALIDE (I)

摘要

PROBLEM TO BE SOLVED: To provide: a precursor solution for producing a thin film causing no void even if film thickness thereof is 100 nm or less, containing copper halide (I) or pseudo copper halide (I), and high in compactness; a method for preparing the same; a film deposition method for the thin film using such precursor solution; and the thin film obtained thereby.;SOLUTION: A precursor solution containing copper halide (I) or pseudo copper halide (I) is prepared as a precursor solution for producing a thin film, the precursor solution containing, in a plus-trivalent ion of copper, a coordination compound formed by coordinating alkanolamine and a halogenated ion or pseudo-halogenated ion.;SELECTED DRAWING: None;COPYRIGHT: (C)2018,JPO&INPIT