Simulations for Optimized Piezoresistors

摘要

As a phenomenon, piezoresistive effect is well understood from the theoretical point of view. Experimental characterizations have also been done on a variety of uniformly doped samples. However, for modern LSI structures, with shallow diffused junctions that have steep gaussian profile, and short distances between electrodes, piezoresistive coefficients differ significantly from those for uniformly doped samples. This paper considers effects of doping profile, electric field level and its distribution on free carrier mobility in order to asses sensitivity of piezoresistors. Simulated performance over temperature range is analyzed as well.