ULTRA-HARD DLC FORMATION AT LOW TEMPERATURE BY GAS CLUSTER ION BEAM ASSISTED DEPOSITION

摘要

This paper describes a new method for forming diamond-like carbon (DLC) films by using gas cluster ion beam bombardment during deposition of fullerene from a heated crucible. This method, which offers low process temperatures and compatibility with large substrate areas, produces pure carbon films exhibiting outstanding physical characteristics. Example DLC films have been deposited onto silicon and steel substrates at room temperature using fullerene vapor with concurrent irradiation by Ar gas cluster ions at 5 to 9 keV. Films of thickness 1 to 2μm showed excellent adhesion. Films deposited using Ar cluster ion energy of 7 keV exhibited Vickers hardness value of 5,000 kg/mm~2 and friction coefficients lower than 0.1, compared with typical values of 3,000 kg/mm~2 and 0.13 respectively for DLC films prepared by other methods. Details of the deposition method and of the film characteristics are discussed.