首页> 外文会议>International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US) >HALL AND MAGNETORESISTANCE EFFECTS OBTAINED FROM SIMULTANEOUS MEASUREMENTS OF LIQUID METALS AND SEMICONDUCTORS
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HALL AND MAGNETORESISTANCE EFFECTS OBTAINED FROM SIMULTANEOUS MEASUREMENTS OF LIQUID METALS AND SEMICONDUCTORS

机译:液态金属和半导体同时测量获得的霍尔效应和磁阻效应

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摘要

Hall measurements of liquid metals, using two-frequency, ac-dc and simultaneous methods are described. The Hall effect has been measured in Hg and Ga metals, in both solid and liquid states. The magnetoresistance and Hall effects have also been measured in an InSb single crystal, which exhibited magnetoresistance even in low magnetic field, and in Si, which did not exhibit magnetoresistance in low magnetic field. In order to investigate the magnetic field dependence of the observed galvanomagnetic effects for solid and liquid state metals, and for semiconductors, Hall measurements in high magnetic field, up to ±9 T, were also performed.
机译:描述了使用双频,交流-直流和同步方法对液态金属进行霍尔测量。霍尔效应已在汞和镓金属中以固态和液态测量。还已经在InSb单晶中测量了磁阻和霍尔效应,InSb单晶甚至在低磁场中也表现出磁阻,而在Si中,在低磁场中也没有表现出磁阻。为了研究固态和液态金属以及半导体的电磁场效应的磁场依赖性,还进行了高达±9 T的强磁场霍尔测量。

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