Photoluminescence enhancement of β-FeSi_2 by optimizing Al-doping concentration

摘要

Photoluminescence (PL) properties of Al-doped β-FeSi_2 grown by ion beam synthesis have been investigated. The Al-doped samples showed increase of the PL intensity. In the dependence of Al composition, the sample of low Al concentration showed the larger PL intensity and activation energy for non-radiative recombination path. The Al dependence indicates that there is competition of enhancement and retardation effects of the PL by the Al-implantation.