Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature

摘要

The degradation behavior for Si p-i-n photodiodes by neutron irradiation at different temperatures was studied. The degradation of the electrical device performance is more pronounced for low-temperature irradiations. Two electron capture levels at E_C - 0.22 eV and E_C - 0.40 eV, respectively, were observed by deep level transient spectroscopy. The degradation of the device performance is correlated with the introduction rate of the radiation-induced lattice defects.