首页> 外文会议>International Conference on Defects in Semiconductors; 20050724-29; Awaji Island(JP) >Growth of bulk β-FeSi_2 crystals by annealing of well-aligned solidification structures
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Growth of bulk β-FeSi_2 crystals by annealing of well-aligned solidification structures

机译:通过良好取向的凝固组织的退火来生长块状β-FeSi_2晶体

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Bulk β-FeSi_2 crystals were grown by annealing of unidirectionally solidified structures with rods of the ε-FeSi in the α-FeSi_2 matrix. The crystallographic orientation of annealed samples was investigated by means of electron-backscattered pattern analysis. It was found that there were fibrous single crystals of β-FeSi_2 in the sample. The β-FeSi_2 crystal was easily grown along the solidification direction. The formation of the fibrous β-FeSi_2 single crystals resulted from limited nucleation at the initial stage.
机译:通过使用α-FeSi_2基体中的ε-FeSi棒对单向凝固组织进行退火,可以生长块状β-FeSi_2晶体。通过电子反向散射图谱分析研究了退火样品的晶体学取向。发现样品中存在β-FeSi_2的纤维状单晶。 β-FeSi_2晶体容易沿着凝固方向生长。 β-FeSi_2纤维状单晶的形成是由于初始阶段的成核作用有限。

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