Implementation of a Hadamard Gate Using Laser Light on a Phosphorus Doped Si Device

摘要

The dynamics of a single qubit, encoded in the charge states of a singly ionized phosphorus atom embedded in silicon bulk material are studied. For the simulation of the system a suitably modified version of the MATLAB package SCHRODINGER was used. Preliminary results were in agreement with previously published work regarding single qubit rotations. For the Hadamard Gate, the duration of the pulse T was computed as a function of input parameters the results produced outputs of the order of 9× 10~(10) sec.