GaAs FET Based LNA Design for WiMAX Applications

摘要

This work deals with the designing of low noise amplifier for WiMAX 802.16e application considering 3.4 to 3.6 GHz frequency band with 3.5GHz as the center frequency. The amplifier is designed using GaAs FET MGF - 1303 of Mitsubishi Technologies with different stabilization techniques to improve stability of potentially unstable device. It is observed that the noise immunity is more in drain resistance stabilized LNA design than in other technique which resulted in noise figure of 0.211 dB and power gain of 15.116 dB. The comparative analysis of the LNA design is discussed in this paper.