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The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

机译:对称阻塞SiC栅极关断(GTO)晶闸管的首次演示

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This paper reports the development of symmetric blocking SiC p-GTO thyristors. The proposed thyristor structure features a positive bevel edge termination implemented by orthogonal dicing technique. In this paper, a detailed design of the device structure, forward current-voltage characteristics, and symmetric blocking capabilities are discussed.
机译:本文报道了对称阻塞SiC p-GTO晶闸管的发展。所提出的晶闸管结构具有通过正交切割技术实现的正斜面边缘终端。本文讨论了器件结构,正向电流-电压特性和对称阻断功能的详细设计。

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