Integrated reverse-diodes for GaN-HEMT structures

摘要

This work introduces an enhanced GaN-HEMT structure that uses separated Schottky contacts as integrated free-wheeling diodes for the reverse operation. The principle is investigated and compared to other integrated reverse-diode concepts. Different diode structures are fabricated and evaluated. The new concept is demonstrated on a large gate width 600 V-device with on-state currents up to 30 A and an on-state resistance of 215 mΩ. Furthermore, the device achieves a very low gate-charge of below 3 nC and a reverse recovery charge of 8 nC.