Application of surface effects externally to alter optical and electronic properties of existing optoelectronic devices: a ten-year update

摘要

Abstract: Semiconductor devices must face various spaceenvironments ranging from extremely low temperatures inthe upper atmosphere to very high temperatures in powersystems, and from low levels of ionizing radiation tohigh levels of neutron irradiation. Pressure variesfrom atmospheric pressure near the ground to vacuum athigh altitudes. The semiconductor materials and devicesare affected by the following external mechanisms:temperature, optical radiation, impurities and ionizedgases, nuclear radiation, particle bombardment andpressure. This paper will discuss the effects of$gamma@-irradiation and pressure on optoelectronicdevices such as related photodiodes, light-emittingdiodes, and charge-coupled devices. These effects willbe related not only to bulk effects, but also tosurface effects.!