SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth

摘要

In this paper, we report a new method for the fabrication of Si-based quantum dot devices with an all low-energy patterning process based on AFM lithography (to avoid defects from e-beam and RIE) and Si/SiGe heterojunctions with epitaxial regrowth to confine holes in three-dimensions. A single-hole transistor, which is the first reported SiGe quantum device with heterojunction passivation/carrier confinement, shows remarkably clean Coulomb blockade oscillations.