School of Electrical Engineering, Beijing Jiaotong University, Beijing, China;
School of Electrical Engineering, Beijing Jiaotong University, Beijing, China;
School of Electrical Engineering, Beijing Jiaotong University, Beijing, China;
Global Energy Interconnection, Research Institute, Beijing, China;
Department of Electrical Engineering, Tsinghua University, Beijing, China;
Department of Electrical Engineering, Tsinghua University, Beijing, China;
Semiconductor device modeling; Silicon carbide; MOSFET; Integrated circuit modeling; Mathematical model; Logic gates; Junctions;
机译:具有温度相关参数的SiC
机译:具有温度相关参数的SiC
机译:基于SiC MOSFET的大功率模块的PSpice解析PSpice模型
机译:SIC MOSFET的温度依赖性PSPICE短路模型
机译:使用Angelov模型在PSpice中对碳化硅(SIC)垂直结场效应晶体管(VJFET)进行紧凑建模,并使用SIC VJFET模型对PSpice模拟电路构建模块进行仿真。
机译:C / SiC纤维增强陶瓷基复合材料中与温度相关的振动阻尼建模
机译:用于siC功率mOsFET模块的pspice建模平台,具有广泛的实验验证