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Selective Anisotropic Dry Etching of Piezoelectric Silk Microstructures Using Oxygen Plasma Ashing

机译:氧等离子体灰化对压电丝微结构的选择性各向异性干法刻蚀

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Micro patterning of FDA approved Silk fibroin polymer derived from Bombyx mori cocoons has wide range of applications in realizing Silk based MEMS and implantable biomedical micro devices. In the present study, a very simple and straightforward micro-pattering approach based on well known dry etching has been presented. The dry etching of silk microstructures was achieved using low pressure oxygen plasma ashing technique. Titanium based stencil mask patterned using photolithography, was used to transfer the desired microstructures onto the silk film. The optimum etching recipe was determined by optimizing the dry etching parameters like RF power delivered onto the carrier, duration of plasma and the oxygen flow rate. The etch rate and the etch uniformity were measured using standard metrological techniques. Selective complete removal of silk with an etch rate of 0.20 urn/min has been reported. Using the optimized dry etching recipe, a complex pattern with minimum feature size of 1.6 μm was achieved.
机译:FDA批准的由家蚕茧衍生的丝素蛋白聚合物的微图案在实现基于丝的MEMS和可植入生物医学微器件方面具有广泛的应用。在本研究中,已经提出了一种基于众所周知的干蚀刻的非常简单直接的微图案化方法。使用低压氧等离子体灰化技术可以实现对丝绸微结构的干法蚀刻。使用光刻技术对钛基模板掩模进行图案化,可将所需的微结构转移到丝膜上。通过优化干法刻蚀参数(例如传递到载体上的RF功率,等离子体的持续时间和氧气流速)来确定最佳刻蚀配方。使用标准计量技术测量蚀刻速率和蚀刻均匀性。据报道,以0.20 urn / min的蚀刻速率选择性完全去除了丝绸。使用优化的干法蚀刻配方,可以获得最小特征尺寸为1.6μm的复杂图案。

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