University of Cambridge Cambridge CB2 1PZ U.K;
Faculty of Engineering Environment and Computing Coventry University Coventry CV12JH UK;
University of Warwick Coventry Coventry CV4 7AL UK;
Insulated gate bipolar transistors; Silicon carbide; Doping; Logic gates; Electric fields; Semiconductor process modeling; Threshold voltage;
机译:20 kV级超高压4h-SiC N-IE-IGBT
机译:瞬态性能> 10 kV SiC IGBT,具有优化的逆行P阱
机译:逆行P井> 10kV SiC IGBT的性能改进
机译:关于超高压4H-SiC IGBT的鲁棒性,具有优化的逆行P阱
机译:开发基于物理的4H-SiC高压功率开关模型-MOSFET,IGBT和GTO。
机译:鲁棒对应物优化的比较理论与计算研究:I。鲁棒线性优化和强大的混合整数线性优化
机译:关于超高压4H-SiC IGBT的鲁棒性,具有优化的逆行P阱