Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon Surface Orientation

摘要

Electrical and physical properties of ErSi_x on n-type Si(100) (111) and (551) surfaces are reported. The ErSi_x density affects the work function of ErSi_x. A controlling the composition ratio of Er and Si is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.