Linearity Measurements of Si/SiGe:C Heterojunction Bipolar Transistor using a Large Signal Network Analyzer associated with an active Load-Pull Setup

摘要

This paper presents original multi-harmonic modulated load-pull measurements on a Si/SiGe:C HBT of STMicroelectronics technology. The original aspect is that the linearity, power and efficiency measurements are realized on an active load-pull test-bench associated with a large signal network analyzer. The aim of the measurements is to optimize and characterize the HBT excited by a CW and a two-tone signal. The comparison with the simulation lets to validate the models in large-signal.