SiGe FILM FORMING METHOD, METHOD OF MANUFACTURING HETEROJUNCTION TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To prevent an SiGe film on an insulating film from becoming rough and to improve film quality and film resistance in an SiGe film forming method, a manufacturing method of a heterojunction transistor and a heterojunction bipolar transistor.;SOLUTION: A method for forming a SiGe film 8 on the insulating film 6 is provided with a buffer forming process for forming a first Si(1-x)Gex film 9 (0≤x0.05) on the insulating film and a main film forming process for forming a second Si(1-y)Gey film 10 (0.05≤y1) on the first Si(1-x)Gex film. The buffer forming process forms the first Si(1-x)Gex in the thickness range of 0.5 nm to 5 nm.;COPYRIGHT: (C)2001,JPO