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Effect of oxide film on Volta potential of aluminium

机译:氧化膜对铝伏电势的影响

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Atomic Force Microscopy (AFM) coupled with Scanning Kelvin Probe ForcernMicroscopy (SKPFM) has been used for years to characterize the surface topographyrnchanges and Volta potential difference (VPD) distribution for different metals andrnalloys before and after corrosion exposure. Aluminum alloys have been paid anrnattention because of their heterogeneous nature. The presence of differentrnintermetallic inclusions in aluminum matrix shows a good contrast of VPD comparingrnwith the surrounding aluminum matrix. However, the surface of alloys was found tornhave different properties after corrosion exposure. In particular, it is resulted in thernsignificant change of VPD over the intermetallics and surrounding aluminum matrix.rnDecrease of VPD (I.e. increase of the nobility) over the intermetallics could bernexplained by the enrichment of the nobler elements in it. However, the reason of thernVPD increase on the adjacent aluminum matrix is still unclear.rnThis work brings new results which can contribute to understanding of such arnphenomenon. The suggestion was that in places around cathodic intermetallics oxidernfilm thickness increases because of the localized anodic polarization of surroundingrnaluminum matrix. In the present paper, AFM coupled with SKPFM technique wasrnused to estimate how the formed oxide film on the metallic aluminium can influencernits Volta potential.rnThe oxide films were prepared in different electrolytes with Ph close to 7. Therndifferent terminal voltage was used to produce oxide films with different thickness.rnImpedance spectra were taken on prepared samples aluminum samples and fittedrnusing appropriate equivalent circuit. To estimate oxide film thickness, values of therncapacitance of oxide films calculated from the Impedance measurements were usedrnin a model of flat condenser. The results have shown decrease of the VPD (increasernof the nobility comparing to pure aluminum substrate) with the increase of aluminumrnoxide film thickness confirming our suggestion that Volta potential increase aroundrnintermetallics can be related to the changes in the surrounding oxide film.
机译:原子力显微镜(AFM)与扫描开尔文探针力显微镜(SKPFM)结合使用已用于表征腐蚀暴露前后不同金属和合金的表面形貌变化和伏特电势差(VPD)分布。铝合金由于其异质性而受到关注。与周围的铝基体相比,铝基体中不同金属间夹杂物的存在表现出良好的VPD对比。然而,发现合金表面在暴露于腐蚀后具有不同的性能。特别是导致金属间化合物和周围铝基体上VPD的显着变化。金属间化合物上VPD的降低(即贵金属的增加)可以通过其中的贵金属元素的富集来解释。但是,尚不清楚相邻铝基体上VPD升高的原因。这项工作带来了新的结果,有助于理解这种现象。这表明在阴极金属间化合物周围的地方,由于周围铝基体的局部阳极极化,氧化膜厚度增加。本文采用原子力显微镜(AFM)结合SKPFM技术来估计在金属铝上形成的氧化膜如何影响伏特电位。rn在不同的电解质中制备了氧化膜,其pH值接近7。使用不同的端电压制备氧化膜。在准备好的样品铝样品上获取阻抗谱,并使用适当的等效电路进行拟合。为了估计氧化膜的厚度,在平坦电容器模型中使用了根据阻抗测量计算出的氧化膜的电容值。结果表明,随着氧化铝膜厚度的增加,VPD的降低(与纯铝基板相比,贵族度的增加)证实了我们的建议,即金属间化合物周围的伏特电势增加可能与周围氧化物膜的变化有关。

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