Advanced spatially resolved electronic structure analysis

摘要

When Si 2p -> CB absorption spectra are obtained with high accuracy,ELNES structure within 2eV of the absorption edge summarize the symmetry-and site-projected bandstructure of the solid.In a 30 deg -ISF-90 deg misfit dislocation,the broken crystal symmetry at the ISF is splits the L_1 Brllouin Zone critical point into two contributions.This L_1 splitting also occurs at the 30 deg partial dislocation core but not at the 90 deg partial.Near edge in-gap states are prominent at both dislocations.An extended,kink-based structural model is suggested for the 90 deg dislocation to understand the spectral results.