Integration of Advanced MOSFET Device with Dual Effective Band Edge Work Function Metals Using both HK and MG Last Scheme

摘要

A 22nm MOSFET device was presented with bulk Si planar process integration in this paper. We have achieved NFET and PFET drive current of 539 μ A/ μ m and 801 μ A / μ m respectively with novel high k and metal gate stack. Excellent DIBL and Swing performance were achieved with 78mV/V and 82mV/V and 62mV/dec and 64mV/dec for NFET and PFET respectively. TiAl alloy with optimized Al concentration and process power as NFET work function metal and TiN with optimized process power, bias and concentration as PFET work function metal were chosen in our experiments. Effective work functions for both NFET and PFET were adjusted to band edge with 4.15eV and 5.04eV respectively by process optimization.