In the paper the model of interaction of the hydrogenated vacancy with silicon interstitial and different dopants (B,P and As) in crystalline silicon is considered. Quantum chemical calculations using the SCF MO LCAO technique in the NDDO valence approach show that the hydrogenation of the vacancy leads to the considerable decrease of the energy barrier height for the interstitial atom incorporation into the vacancy site of the crystalline lattice. The potential barriers for incorporation of the interstitial into the site and for leaving the atoms from the site ahve been calculated as a function of hydrogen localization in the vicinity of the vacancy (inside and outside of the vacancy), the charge state of hydrogen localized outside the vacancy (H~0, H~+ and H~-) and the transport direction (<111>, <110> and <100>) of the atoms both to the vacancy and out from it. The theory is compared with the reported experimental results.
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机译:在本文中,考虑了氢化空位与晶体硅中硅间隙和不同掺杂剂(B,P和As)相互作用的模型。在NDDO价态方法中使用SCF MO LCAO技术进行的量子化学计算表明,空位的氢化导致间隙原子掺入晶格的空位的能垒高度大大降低。根据空位附近(空位的内部和外部)的氢局部化,氢的电荷状态局部化,计算了将间隙插入到位点以及使原子离开位点的潜在势垒空位(H〜0,H〜+和H〜-)和原子向空位的传输方向(<111>,<110>和<100>)。将该理论与报道的实验结果进行了比较。
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