3.0mW GaInNAs long-wavelength vertical-cavity surface-emitting laser grown by metalorganic chemical vapor deposition

摘要

We have optimized the doping levels in distributed Bragg reflectors (DBRs) and GalnNAs/GaAs quantum well (QW) structures in order to enhance their optical output power. We achieved high output power GalnNAs vertical-cavity surface-emitting lasers (VCSELs) emitting at 1260 nm. The continuous wave (CW) output power of the devices reached 3.0mW at room temperature, with a slope efficiency of 0.28W/A. The devices consisted of conventional n-type and p-type doped DBRs with GalnNAs/GaAs 3QWs, and they were grown by metalorganic chemical vapor deposition (MOCVD).