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Recent achievements in ultra-high vacuum arc deposition of superconducting Nb layers

机译:超导Nb层超高真空电弧沉积的最新研究成果

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The properties of niobium films obtained by cathodic arc deposition in ultra high vacuum (UHVCA) using constant and pulsed bias are discussed and compared. UHVCA-produced Nb films are found to have structural and transport properties closer to Nb bulk ones, providing a promising alternative for niobium coated, high voltage, high Q, copper RF cavities with respect to the standard magnetron sputtering technique. A series of sapphire substrate coatings with niobium has been performed at pulsed bias and compared with the films deposited at cd bias. Using pulsed bias resulted in increasing an average deposition ratio by a factor of 2-3 up to a value of 0.9 um/min. The layers coated with pulsed bias reached higher RRR values. Their microstructure is characterized by much larger, randomly oriented grains, compared to the layers obtained with constant bias, with no evidence of epitaxial growth and a lattice parameter identical to that of bulk niobium. The apparatus for coating of a cavity using planar UHVCA sources is presented and discussed. First results on plasma transport into a cavity cell are presented showing that it is possible to guide the plasma generated by a planar arc source inside it. Several magnetic configurations have been analyzed and different voltage bias used
机译:讨论并比较了在超高真空(UHVCA)中使用恒定偏压和脉冲偏压通过阴极电弧沉积获得的铌膜的性能。已发现,UHVCA生产的Nb膜的结构和传输性能接近Nb块状膜,相对于标准磁控溅射技术,它为铌涂覆的,高电压,高Q,铜RF腔提供了有希望的替代方法。已经在脉冲偏压下进行了一系列含铌的蓝宝石衬底涂层,并与在cd偏压下沉积的薄膜进行了比较。使用脉冲偏压导致平均沉积率增加2-3倍,达到0.9 um / min的值。用脉冲偏压涂覆的层达到较高的RRR值。与通过恒定偏压获得的层相比,它们的微结构的特征在于更大,随机取向的晶粒,没有外延生长和晶格参数与块状铌相同的证据。介绍并讨论了使用平面UHVCA光源涂覆腔体的设备。提出了将等离子输送到型腔的初步结果,表明可以引导由内部平面电弧源产生的等离子。分析了几种磁性配置,并使用了不同的电压偏置

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