首页> 外文会议>Conference on Photomask and Next-Generation Lithography Mask Technology XI pt.1; 20040414-20040416; Yokohama; JP >Chemical Characteristics of Negative-tone Chemically Amplified Resist For Advanced Mask Making
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Chemical Characteristics of Negative-tone Chemically Amplified Resist For Advanced Mask Making

机译:用于高级面罩制造的负性化学放大抗蚀剂的化学特性

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We investigated the film property and the lithographic performance of five commercialized NCARs. This report shows the relationship between chemical structure and EB lithographic performance, such as resolution, sensitivity and environmental stability. In this study, we found the good matching the matrix polymer, the cross linker and the photo acid generator(PAG) against NCARs issues. Furthermore, we could demonstrate the trade-off relation for lithographic factor and stabilized factor by chemical characteristics. This report suggests the strategy that was design of chemical structure for the next generation NCARs.
机译:我们研究了五种商业化NCAR的胶片性能和平版印刷性能。该报告显示了化学结构与EB光刻性能之间的关系,例如分辨率,灵敏度和环境稳定性。在这项研究中,我们发现与NCARs问题的基质聚合物,交联剂和光致产酸剂(PAG)的良好匹配。此外,我们可以通过化学特性证明平版印刷因子和稳定化因子之间的权衡关系。该报告提出了设计下一代NCAR的化学结构的策略。

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