A new DUV die-to-database high-resolution reticle defect inspection platform has been developed. This platform is designed to meet the 90 nm through 65 nm node 248/193 nm lithography reticle qualification requirements of the IC industry. These design nodes typically include: COG layers, EPSM layers, and AltPSM layers, plus aggressive OPC which includes jogs, serifs, and SRAF (sub-resolution assist features). The architecture and technology of the new inspection platform is described. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as, advanced 90nm through 65nm node reticles from industry sources. Results show high sensitivity and low false detections being achieved.
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