Original technology applied for manufacturing a cantilever-type piezo-resistive micro-accelerometer

摘要

An original new design for manufacturing a piezo-resistive type micro- accelerometer made by Si bulk micro-machining is proposed. The enhancements applied by the authors especially in design and also in processing and control techniques lead to a more precise device, having a superior reliability. In contrast to classical type, the new model has shorter cantilevers, enabling to obtain an uniform stress and so permitting us a long piezo-resistor design. This in turn enables the use of low surface boron concentration at diffused resistors, resulting in a low temperature drift. In order to cut mask fabrication costs, a new approach, based on photoplot-type reticules, is applied, too. After ANSIS simulation, showing the benefits of this new design, it follows the description of layout-based surface and volume control elements, and finally the processing enhancements applied to give a 1g piezo-resistive accelerometer