Light extraction technologies for high efficiency GaInN-LED devices

摘要

Data are presented for an GaInN based thinfilm LED. The LED is fabricated by transferring the epilayers with laser lift off from sapphire to a GaAs host substrate. In combination with efficient surface roughening and highly reflective p-mirror metallisation an extraction efficiency of 70% and wall plug efficiency of 24% at 460nm have been shown. The chips showed 12mW @ 20mA with an Voltage of 3.2V. The technology is scalable from small size LEDs to high current Chips and is being transferred to mass production.