Growth of high resistivity CdTe and (Cd,Zn)Te crystals

摘要

CdTe and (Cd, Zn)Te high resistivity crystals were grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. Different dopants had been applied to obtain resistivities of 5 x 10~8 Ωcm up to 2 x 10~(10) Ωcm and 3 x 10~(-3) cm~2/V for the mobility-lifetime product for electrons for the indium doped material.