Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere

摘要

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstruc-ture. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-ln codoping, which produces p-type conduction with high hole concentration and hall mobility.