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Field emission properties from multi-walled carbon nanotubes grown on silicon nanoporous pillar array

机译:硅纳米多孔柱阵列上生长的多壁碳纳米管的场发射特性

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Multi-walled carbon nanotubes (CNTs) were grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition (CVD). Surface morphologies and microstructure of the resultant have been studied by a field emission scanning electron microscope (FE-SEM), Raman spectrum, transmission electron microscope (TEM) and high-resolution transmission electron microscopy (HRTEM). The composition of samples was determined by energy dispersive X-ray spectroscopy (EDS). The results showed that a great deal of CNTs, with diameter in the range of 20-70 nm, incorporated with Si-NPA and a large scale nest array of CNTs/Si-NPA (NACNT/Si-NPA) is formed. EDS analyse showed that the composition of carbon nanotubes was carbon. Field emission measurements showed that a current density of 5 mA/cm2 was obtained at an electric field of 4.26 V/μm, with a turn-on field of 1.3 V/μm. The enhancement factor calculated according to the Fowler-Nordheim theory was ~11000. This excellent field emission performance is attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of a nest-shaped carbon nanotube array. A schematic drawing that illustrate the experimental configuration is given. These results indicate that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays.
机译:通过热化学气相沉积(CVD)在硅纳米多孔柱阵列(Si-NPA)上生长多壁碳纳米管(CNT)。通过场发射扫描电子显微镜(FE-SEM),拉曼光谱,透射电子显微镜(TEM)和高分辨率透射电子显微镜(HRTEM)研究了所得物的表面形态和微观结构。样品的组成通过能量色散X射线光谱(EDS)确定。结果表明,形成了许多直径为20-70 nm的CNT,并与Si-NPA结合并形成了大规模的CNT / Si-NPA嵌套阵列(NACNT / Si-NPA)。 EDS分析表明,碳纳米管的组成是碳。场发射测量表明,在4.26 V /μm的电场和1.3 V /μm的导通电场下,可获得5 mA / cm2的电流密度。根据Fowler-Nordheim理论计算出的增强因子为〜11000。这种出色的场发射性能归因于NACNT / Si-NPA的独特结构和形态,特别是巢状碳纳米管阵列的形成。给出了说明实验配置的示意图。这些结果表明,NACNT / Si-NPA可能是平板显示器潜在应用的理想候选阴极。

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