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An analysis of the Quality of Charge Qubit Measurement by a Strongly Coupled Single-Electron Transistor

机译:强耦合单电子晶体管电荷量子位测量质量的分析

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摘要

We derive a Lindblad-form master equation and a corresponding quantum trajectory model for continuous measurement of a charge qubit by a single electron transistor (SET) operating in the sequential-tunneling regime when the SET-qubit coupling is strong compared to the SET tunnelling rates. We present an analysis of the quality of the qubit measurement in this model (sensitivity versus back-action) and show that in one strongly coupled, asymmetric regime, the SET can approach the limit of an ideal detector with an almost pure conditioned state. We also quantify the quality of the SET using generalized definitions of measurement time and decoherence time.
机译:我们推导了一个林德布拉德形式的主方程和一个相应的量子轨迹模型,用于在SET-qubit耦合强于SET隧穿率的情况下,以顺序隧道方式操作的单个电子晶体管(SET)连续测量电荷qubit 。我们对这种模型中的量子位测量质量进行了分析(灵敏度与反向作用),结果表明,在一个强耦合的非对称状态下,SET可以接近具有几乎纯条件状态的理想检测器的极限。我们还使用测量时间和去相干时间的广义定义来量化SET的质量。

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