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Sensitivity and back action in charge qubit measurements by a strongly coupled single-electron transistor

机译:强耦合单电子晶体管在电荷量子位测量中的灵敏度和反作用

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摘要

We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the Lindblad form that is necessary and sufficient for guaranteeing valid physical states. In this paper we derive a Lindblad-form master equation and a corresponding quantum trajectory model for continuous measurement of the charge qubit by a SET. Our approach requires that the SET-qubit coupling be strong compared to the SET tunnelling rates. We present an analysis of the quality of the qubit measurement in this model (sensitivity versus back-action). Typically, the strong coupling when the SET island is occupied causes back-action on the qubit beyond the quantum back-action necessary for its sensitivity, and hence the conditioned qubit state is mixed. However, in one strongly coupled, asymmetric regime, the SET can approach the limit of an ideal detector with an almost pure conditioned state. We also quantify the quality of the SET using more traditional concepts such as the measurement time and decoherence time, which we have generalized so as to treat the strongly responding regime.
机译:我们考虑通过在顺序隧道模式下运行的单电子晶体管(SET)进行电荷量子位监视(连续时间微弱测量)。我们证明了该状态下常用的主方程式不是Lindblad形式,这对于保证有效的物理状态是必需的和足够的。在本文中,我们推导了Lindblad形式的主方程和相应的量子轨迹模型,用于通过SET连续测量电荷量子位。我们的方法要求SET-qubit耦合要比SET隧穿速率强。我们在此模型中分析了量子比特测量的质量(灵敏度与反向作用)。通常,当SET岛被占据时,强耦合会导致对量子位的反向作用超出其灵敏度所需的量子反向作用,因此,条件量子位状态被混合。但是,在一种强耦合的非对称状态下,SET可以接近具有几乎纯条件状态的理想检测器的极限。我们还使用更传统的概念(例如测量时间和去相干时间)对SET的质量进行了量化,我们将其概括为处理强响应机制的方法。

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