Very High Electrical Stability of Bottom-Gate/Top-Contact Type Polymer-Based Organic Field-Effect Transistors with Perfluoropolymer-Coated

摘要

Solution-processed organic field-effect transistors (OFETs) have important advantages over conventional silicon-based transistors, such as low-cost and low-temperature fabrication, suitability for large-area application, flexibility, and light weight. In addition to the field-effect charge carrier mobility, the long-term stability of OFETs is essential for commercial applications. A hydroxyl-free amorphous perfluoropolymer, whose trade name is CYTOP (Asahi Glass Japan), is a promising gate dielectric or coating material for gate dielectric surfaces for fabricating electrically stable OFETs, because it is an excellent electrical insulator and shows a very high water-repellence. Indeed, high electrical stability has been reported for OFETs with CYTOP gate dielectric or CYTOP-coated gate dielectric . However, for solution processing except for push-coating , the uniform deposition of active layers is difficult on such a highly lyophobic surface due to the dewetting of common organic solvents. Thus, there are few reports on the electrical characteristics of bottom-gate (BG) type polymer-based OFETs with CYTOP gate dielectrics or CYTOP-coated gate dielectrics. In this study, we developed a simple solution process to form uniform polymeric semiconductor layer on CYTOP-coated gate dielectric surfaces, and the electrical characteristics and bias-stress effect of polymer-based OFETs with CYTOP-coated gate dielectrics were carefully investigated under vacuum condition.