首页> 外文会议>2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive >Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation
【24h】

Improvement of SiC power module layout to mitigate the gate-source overvoltage during switching operation

机译:改进了SiC电源模块的布局,以缓解开关操作期间的栅源过压

获取原文
获取原文并翻译 | 示例

摘要

In the automotive applications, especially in traction inverters for electrical vehicles, high power, efficiency, and reliability are fundamental targets. In this paper, an optimized layout of SiC-based power module able to limit the positive and negative transient gate-source voltages is proposed. The module design and features are firstly described, then SPICE-SIMetrix simulations on a layout without optimization are shown. Moreover, a description of the necessary guidelines to cope with transient negative and positive overvoltages phenomena is outlined. Finally, simulation test results on the optimized module layout are presented.
机译:在汽车应用中,尤其是在电动汽车的牵引逆变器中,高功率,效率和可靠性是基本目标。本文提出了一种能够限制正负瞬态栅极-源极电压的SiC基功率模块的优化布局。首先介绍模块的设计和功能,然后显示未经优化的SPICE-SIMetrix仿真。此外,概述了应对瞬态负和正过电压现象的必要准则。最后,给出了优化模块布局的仿真测试结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号