ADG Group RD Power Discrete STMicroelectronics: ADG (Automotive and Discrete Group);
ADG Group RD Power Discrete STMicroelectronics: ADG (Automotive and Discrete Group);
ADG Group RD Power Discrete STMicroelectronics: ADG (Automotive and Discrete Group);
ADG Group RD Power Discrete STMicroelectronics: ADG (Automotive and Discrete Group);
ADG Group RD Power Discrete STMicroelectronics: ADG (Automotive and Discrete Group);
PDG POWER TRANSISTOR DIVISION;
STMicroelectronics Global Sales Marketing, System Research Applications, System Lab Development Unit;
CATANIA, I-95121, ITALY;
aPSI3D, France;
Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi (CNR-IMM), CATANIA, I-95121, ITALY;
Consiglio Nazionale delle Ricerche Istituto per la Microelettronica e Microsistemi (CNR-IMM), CATANIA, I-95121, ITALY;
Distretto Tecnologico Sicilia Micro e Nano Sistemi scarl, CATANIA, I-95121, ITALY;
Distretto Tecnologico Sicilia Micro e Nano Sistemi scarl, CATANIA, I-95121, ITALY;
innovation management; modules; power semiconductor devices; silicon compounds; wide band gap semiconductors;
机译:在可持续性宽带隙功率器件的硅顺应性基板和新型3C-SiC基板上异质外延生长3C-SiC(挑战)
机译:功率器件的宽带隙半导体(SiC和GaN)技术的新兴趋势
机译:先进的飞机电力电子系统-模拟,标准和宽带隙设备的影响
机译:Winsic4ap:高级电力宽带差距创新SIC
机译:高功率密度,四象限,DC-AC转换器使用宽带隙半导体和有功功率去耦
机译:用于发电窗应用的可印刷宽带隙黄铜矿薄膜
机译:单相双向功率因数校正升压转换器-使用宽带隙器件GaN-HEMT和SiC的图腾柱PFC转换器的性能评估
机译:宽间隙半导体,siC和GaN的低频噪声特性研究,以及siC基功率器件,二极管和晶闸管的主要特性