Single Component Chemically Amplified Resist Based on Dehalogenation of Polymer

摘要

For chemically amplified resists which generally consists of a polymer and an acid generator, the homogeneity of resist materials is a serious issue. The incorporation of acid generators into polymers via covalent bonds has attracted much attention because it removes the compatibility problem of acid generators with polymers. In this study, we designed a single-component chemically amplified resist, taking advantage of the difference of reaction mechanisms between electron beam and photoresists. The designed resist has a hydroxyl group as a proton source and halogen atoms as an anion source for acid generation. The developed resist showed an excellent performance.