Intel Corporation, 2200 Mission College Blvd, Santa Clara, CA 95054 USA,IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
Tokyo Electron Europe, Kerkenbos 1015, Unit C, 6546 BB, Nijmegen, The Netherlands;
Tokyo Electron Europe, Kerkenbos 1015, Unit C, 6546 BB, Nijmegen, The Netherlands;
Intel Corporation, Components Research, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;
Intel Corporation, Components Research, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
Dry Development Rinse Process; DDRP; Dry Development Rinse Material; DDRM; Pattern collapse; ultimate resolution; line width roughness; LWR; exposure latitude;
机译:ArF抵抗中的图案塌陷改善:添加表面活性剂的漂洗和软烘烤的影响
机译:通过控制半导体光刻的开发过程中的气氛来折叠缓解
机译:冲洗干燥过程中基材温度对微图案倾斜的影响
机译:通过图案折叠缓解,干燥发育冲洗过程实现最终分辨率改善
机译:原位电化学残留传感器和过程模型在纳米结构的漂洗和干燥中的应用。
机译:具有复杂翻译后修饰修饰模式的多肽的高分辨率MSMS光谱分析的数据处理算法
机译:ARF抗蚀剂的模式塌陷改善:表面活性剂加入漂洗和软烘烤的影响