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Directed self-assembly of topcoat-free, integration-friendly high-χ block copolymers

机译:无面涂层,易整合的高χ嵌段共聚物的定向自组装

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摘要

To extend scaling beyond poly(styrene-b-methyl methacrylate) (PS-b-PMMA) for directed self-assembly (DSA), high quality organic high-χ block copolymers (HC series) were developed and applied to implementation of sub-10 nm L/S DSA. Lamellae-forming block copolymers (BCPs) of the HC series showed the ability to form vertically oriented polymer domains conveniently with the in-house PS-r-PMMA underlayers (AZEMBLY™ EXP NLD series) without the use of an additional topcoat. The orientation control was achieved with low bake temperatures (≤ 200 ℃) and short bake times (≤ 5 min). Also, these process-friendly materials are compatible with existing 193i-based graphoepitaxy and chemoepitaxy DSA schemes. In addition, it is notable that 8.5 nm organic lamellae domains were amenable to pattern development by simple dry etch techniques. These successful demonstrations of high-χ L/S DSA on 193i-defined guiding patterns and pattern development can offer a feasible route to access sub-10 nm node patterning technology.
机译:为了将规模扩展到用于定向自组装(DSA)的聚(苯乙烯-甲基丙烯酸甲酯)(PS-b-PMMA)之外,开发了高质量的有机高χ嵌段共聚物(HC系列),并将其应用于实施亚砜10 nm L / S DSA。 HC系列的形成薄片的嵌段共聚物(BCP)显示了使用内部PS-r-PMMA底层(AZEMBLY™EXP NLD系列)方便地形成垂直取向的聚合物域的能力,而无需使用额外的面漆。较低的烘烤温度(≤200℃)和较短的烘烤时间(≤5分钟)可实现定向控制。而且,这些工艺友好型材料与现有的基于193i的石墨外延和化学外延DSA方案兼容。另外,值得注意的是,通过简单的干法蚀刻技术,可以将8.5 nm的有机片晶域进行图案显影。这些高χL / S DSA在193i定义的引导图案和图案开发上的成功演示可以提供一种访问10纳米以下节点图案技术的可行途径。

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  • 来源
  • 会议地点 San Jose CA(US)
  • 作者单位

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    EMD Performance Materials Corp., 70 Meister Avenue, Somerville, NJ 08876, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Watson Research Center, 1101 Route 134 Kitchawan Rd, Yorktown Heights, NY 10598, USA;

    IBM Albany Nanotech, 257 Fuller Road, Albany, NY 12203, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

    IBM Research - Almaden, 650 Harry Road, San Jose, CA 95120, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    organic high-χ block copolymers; topcoat-free; perpendicular lamellae; graphoepitaxy; chemoepitaxy; directed self-assembly; pattern development;

    机译:有机高χ嵌段共聚物;无面漆;垂直薄片石墨外延;化学外延定向自组装;模式发展;

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