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Fundamental Research on Generation of Nanostructure by Means of Local Anodic Oxidation

机译:通过局部阳极氧化产生纳米结构的基础研究

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A method to easily and economically manufacture more precise patterns compared with usual MEMS technique has been searched for. Under such circumstances, this research aims to clarify the formation of nano-scale protrusion structure produced by local anodic oxidation on Si wafer surface in expectation of the nano/micro mold production for nanoimprint lithography in future. In this report, the influences of contact width and distance between probe tip and Si wafer surface (distance between terminals) on the size and shape of protrusion patterns were examined in order to clarify the fundamental phenomena in local anodic oxidation. A scanning probe microscope equipped with a current measuring unit was utilized in local anodic oxidation experiments. As a result, it was confirmed that the size of generated protrusion structure became larger with increasing the contact width and became smaller with increasing the distance between probe tip and Si wafer surface. These facts will be useful in producing 3-D nanostructures in future.
机译:已经寻求了一种与通常的MEMS技术相比容易且经济地制造更精确的图案的方法。在这种情况下,本研究旨在阐明由硅片表面局部阳极氧化产生的纳米级突起结构的形成,以期有望将来用于纳米压印光刻的纳米/微模具生产。在本报告中,研究了接触宽度和探针尖端与硅晶片表面之间的距离(端子之间的距离)对突起图案尺寸和形状的影响,以阐明局部阳极氧化的基本现象。在局部阳极氧化实验中使用了配备有电流测量单元的扫描探针显微镜。结果,证实了产生的突起结构的尺寸随着接触宽度的增加而变大,并且随着探针尖端与Si晶片表面之间的距离的增加而变小。这些事实将在将来生产3-D纳米结构中有用。

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