Application and advantages of larger Boron cluster ions for 22nm and beyond technology nodes

摘要

Cluster Ion implantation offers an attractive alternative approach to realize applications in semiconductor devices at 22nm node and beyond. We present here the advantages of Cluster ions with their special property of creating self-amorphous layer even at a lower dose. Here we show XTEM, SIMS and sheet resistance (Rs) measurements to elucidate the advantages of heavier cluster ion species like B36, B18 and C16. Using millisecond anneal technologies we show here that one can meet ultra-shallow junction depth (Xj) requirements as well as very low sheet resistance values.