National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan;
silicon carbide; joining; tape cast; microstructure; mechanical properties;
机译:SiC与浸渗带铸TiB_2-C中间层的结合:中间层组成和厚度对显微组织和力学性能的影响
机译:Ni-Si和Mo中间层连接SiC / SiC和SiC / Kovar
机译:Ni-Si和Mo中间层连接SiC / SiC和SiC / Kovar
机译:通过磁带铸造SiC-AL_2O_3-Y_2O_3中间层加入SIC
机译:使用旋涂夹层连接陶瓷材料。
机译:在不同TMS流量增量下合成的梯度改性HfC-SiC混合双中间层用于将金刚石涂层沉积到WC-Co基底上
机译:带有Ti夹层的CVD-SiC涂层Cf / SiC复合材料的快速接合
机译:siC微波接合中间层材料的研究。