Photo Resist Stripping Using an Alkaline Accelerator Containing Wet-Vapor

摘要

This paper presents a newly developed method for resist removal on a high dose ion implanted surface using an alkaline accelerator containing Wet-vapor. It reveals perfect removal efficiency of the resist, while conventional method that is oxygen plasma ashing followed by SPM cleaning is not effective lor removing it. This is attributed to the removal mechanism difference of a high dose ion-implanted resist residues in comparison with those after other processes.