Electroluminescent Characteristics of ZnS Films Grown by CVD with Pulsed Laser Ablation Impurity Doping

摘要

The ZnS:Mn films were prepared by the low pressure thermal chemical vapor deposition with doping of impurity Mn by the pulsed YAG laser ablation of metal Mn target in the deposition chamber. The Mn was successfully doped into the growing ZnS films by this method. The Crystallinity of the films were generally poor, however, the electroluminescent characteristics were almost same as those of good crystalline films hitherto reported.